فیلترها/جستجو در نتایج    

فیلترها

سال

بانک‌ها




گروه تخصصی









متن کامل


اطلاعات دوره: 
  • سال: 

    1400
  • دوره: 

    52
  • شماره: 

    2
  • صفحات: 

    201-2013
تعامل: 
  • استنادات: 

    0
  • بازدید: 

    148
  • دانلود: 

    14
چکیده: 

To assesse the iron and Silicon effects on the yield and physiological characteristics of green pea, Wando cultivar by ASGrow Corporation was used in three levels of iron chelate (0.05, 0.1 and 0.3 gr per l-1) and Silicon (0, 14 and 28 mg per l-1), as a factorial experimental in completely randomized design with three replications. In this experiment, characterisics such as fresh and dry weight of grain, the number of grain per pod, concentration of Fe, Cu, Mn, Zn and Si in leaf and grain were measured. Results showed that the interaction of Fe and Si was significant at p<0.01 on grain fresh and dry wigeht, concentratin of leaf and grain Fe, leaf Mn, leaf and grain Zn and leaf Si and the application of Fe and Si was significant separately, on other traits such as number of grain per pod, concentration of leaf and grain Cu, Mn and Si in grain.  The Mean squares showed that the application of Fe and Si significantly increased fresh and dry grain weight and Si laef concetration and decreased the concentratin of leaf and grain Fe and Mn as well as grain Mn.  The enhancement of Fe and Si application separately decreased the concentration of Mn, Cu and zinc leaf and grains, but the Si concentration of leaf and grain were increased by Si application. The concentration of Fe, Mn, Cu and Zn were decreased in leaf and grain because of antagonistic effects. It can be concluded that Si reduces the harmfull effects of high levels of iron toxicity and the application of 0.1 g/l and 25 mg/l can be recommended as the best treatments.

شاخص‌های تعامل:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

بازدید 148

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesدانلود 14 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesاستناد 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesمرجع 0
عنوان: 
نویسندگان: 

EPSTEIN E.

اطلاعات دوره: 
  • سال: 

    1999
  • دوره: 

    50
  • شماره: 

    -
  • صفحات: 

    641-664
تعامل: 
  • استنادات: 

    1
  • بازدید: 

    88
  • دانلود: 

    0
کلیدواژه: 
چکیده: 

شاخص‌های تعامل:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

بازدید 88

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesدانلود 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesاستناد 1 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesمرجع 0
نویسندگان: 

ونک امین | امینی امیر

اطلاعات دوره: 
  • سال: 

    1403
  • دوره: 

    22
  • شماره: 

    76
  • صفحات: 

    45-53
تعامل: 
  • استنادات: 

    0
  • بازدید: 

    20
  • دانلود: 

    0
چکیده: 

دراین مقاله، ترانزیستور اثر میدانی تونلی بدون پیوند ناهمگن همراه شده با تکنولوژی Silicon-on-nothing (SON HS-JLTFET) پیشنهاد می شود. ترانزیستور پیشنهادی در مقایسه با ترانزیستور تونل‎زنی بدون پیوند مرسوم دو مزیت دارد. اولین مزیت، یک دهه افزایش در جریان روشنی و بهبود 10 درصدی نوسانات زیر آستانه است که بخاطر استفاده از InAs در ناحیه ی سورس می باشد. InAs به دلیل انرژی شکاف باند کمتری که نسبت به Si دارد سبب پهنای سد تونل زنی کمتر در پیوند سورس/کانال می شود. لذا الکترون های بیشتری از سورس به کانال تونل زنی می­کنند. در نتیجه سبب افزایش نرخ تونل زنی و بهبود در جریان روشنی و نوسان زیر آستانه می شود. مزیت دیگر شامل کاهش جریان ambipolar به کمک تکنیک SON است. در واقع،  air به دلیل ثابت دی الکتریک کمتری که نسبت به اکسید SiO2 دارد میدان الکتریکی را در پیوند درین/کانال کاهش می دهد.میدان کاهش یافته سبب پهنای سد بزرگتری می شود. لذا جریان ambipolar را کاهش می دهد.

شاخص‌های تعامل:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

بازدید 20

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesدانلود 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesاستناد 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesمرجع 0
مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources
اطلاعات دوره: 
  • سال: 

    2016
  • دوره: 

    49
  • شماره: 

    1
  • صفحات: 

    43-47
تعامل: 
  • استنادات: 

    0
  • بازدید: 

    2427
  • دانلود: 

    0
چکیده: 

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, Silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

شاخص‌های تعامل:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

بازدید 2427

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesدانلود 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesاستناد 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesمرجع 0
نویسندگان: 

BISI O. | OSSICINI S. | PAVESI L.

نشریه: 

SURFACE SCIENCE REPORTS

اطلاعات دوره: 
  • سال: 

    2000
  • دوره: 

    38
  • شماره: 

    -
  • صفحات: 

    1-126
تعامل: 
  • استنادات: 

    3
  • بازدید: 

    204
  • دانلود: 

    0
کلیدواژه: 
چکیده: 

شاخص‌های تعامل:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

بازدید 204

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesدانلود 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesاستناد 3 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesمرجع 0
عنوان: 
نویسندگان: 

نشریه: 

نانوساختارها

اطلاعات دوره: 
  • سال: 

    0
  • دوره: 

    10
  • شماره: 

    4
  • صفحات: 

    -
تعامل: 
  • استنادات: 

    0
  • بازدید: 

    17
  • دانلود: 

    0
کلیدواژه: 
چکیده: 

شاخص‌های تعامل:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

بازدید 17

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesدانلود 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesاستناد 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesمرجع 0
مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources
نویسندگان: 

SODERBAG A.

اطلاعات دوره: 
  • سال: 

    1995
  • دوره: 

    -
  • شماره: 

    -
  • صفحات: 

    0-0
تعامل: 
  • استنادات: 

    1
  • بازدید: 

    85
  • دانلود: 

    0
کلیدواژه: 
چکیده: 

شاخص‌های تعامل:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

بازدید 85

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesدانلود 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesاستناد 1 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesمرجع 0
نویسندگان: 

SAXENIAN A.

نشریه: 

TECHNOLOGY REVIEW

اطلاعات دوره: 
  • سال: 

    1994
  • دوره: 

    97
  • شماره: 

    -
  • صفحات: 

    42-42
تعامل: 
  • استنادات: 

    1
  • بازدید: 

    154
  • دانلود: 

    0
کلیدواژه: 
چکیده: 

شاخص‌های تعامل:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

بازدید 154

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesدانلود 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesاستناد 1 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesمرجع 0
اطلاعات دوره: 
  • سال: 

    2015
  • دوره: 

    11
تعامل: 
  • بازدید: 

    164
  • دانلود: 

    0
چکیده: 

INTRODUCTION POROUS Silicon (PS) HAS ATTRACTED MUCH ATTENTION AS PROMISING SEMICONDUCTOR MATERIALS FOR OPTICAL AND ELECTRONIC DEVICE APPLICATIONS. [1, 2]. ELECTROCHEMICAL ANODIC ETCHING METHOD IS AN EFFECTIVE TECHNIQUE TO PRODUCE UNIFORM PORES ON THE SURFACE OF P-TYPE Silicon WAFER. SEVERAL PARAMETERS ARE USED TO OPTIMIZE THE CHARACTERIZATION OF SURFACE OF A POROUS LAYER, SUCH AS ETCHING TIME, CURRENT DENSITY AND CONCENTRATION OF ETCHING SOLUTION [3, 4, 5]. IN THIS RESEARCH, RESISTANCE EFFECT ON TWO WAFERS WITH RESISTIVITY 10Ω.CM AND 0.04 W.CM WAS INVESTIGATED IN CONSTANT CONDITIONS.

شاخص‌های تعامل:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

بازدید 164

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesدانلود 0
نویسندگان: 

NEMATI Z.A. | POYAMEHR M.R.

اطلاعات دوره: 
  • سال: 

    2003
  • دوره: 

    16
  • شماره: 

    4 (TRANSACTIONS B: APPLICATIONS)
  • صفحات: 

    361-372
تعامل: 
  • استنادات: 

    0
  • بازدید: 

    491
  • دانلود: 

    0
چکیده: 

Three different materials (aluminum, ferro-Silicon and Silicon ) were used as ‎antioxidants in order to prevent the decarburization process and to keep and/or ‎increase the final properties in MgO-C refractories. Their effects were compared by ‎measuring the physical and mechanical properties as well as oxidation and the ‎resultant phases and microstructures, in the temperature range of 200-1600°C. High ‎temperature oxidation was measured up to 1000°C. The impurities of the aluminum ‎and Silicon powders were less than 1%. The ferro-Silicon contains 2-5% Al, and 10-‎‎20% Fe. Results indicate that the oxidation of the samples were much better in the ‎ferroSilicon that aluminum and Silicon case. The CCS measurements indicate more ‎improvements due to the effects of ferro-Silicon than Silicon case. Results indicate that ‎aluminum is more effective at low temperature. However, at higher temperatures, the ‎other two anti-oxidants are more effective. The phase analysis indicates that the ‎reaction of M__2S phase with other phases might cause some reduction of high ‎temperature behaviors. Also, phase analysis indicates the formation of MgO-‎FeO/Fe__2O__3 phase, aluminum and Silicon carbides as well as Spinel phase in the ‎samples‏.‏

شاخص‌های تعامل:   مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

بازدید 491

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesدانلود 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesاستناد 0 مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resourcesمرجع 0
litScript
telegram sharing button
whatsapp sharing button
linkedin sharing button
twitter sharing button
email sharing button
email sharing button
email sharing button
sharethis sharing button